Title :
Sub-millisecond thermal impedance and steady state thermal resistance explored [power MOSFETs]
Author_Institution :
Harris Semicond., Mountaintop, PA, USA
Abstract :
Thermal characterization of semiconductor devices has been ongoing in laboratories for the last forty years and techniques are well known. However, given the dated equipment that many manufacturers use, it is debatable whether these techniques are accurate. This paper (1) explores thermal impedance and thermal resistance measurement methods for power MOSFETs; (2) investigates test system measurement errors and a new test circuit for evaluation of transient pulse widths of 1 ms and narrower; (3) shows that not all characterization heat sinks are created equal.
Keywords :
heat sinks; measurement errors; power MOSFET; semiconductor device packaging; test equipment; thermal analysis; thermal management (packaging); thermal resistance measurement; characterization heat sinks; power MOSFETs; semiconductor devices; steady state thermal resistance; test circuit; test equipment; test system measurement errors; test technique accuracy; thermal characterization; thermal impedance; thermal impedance measurement; thermal resistance measurement; transient pulse width; Circuit testing; Electrical resistance measurement; Impedance; Laboratories; MOSFETs; Semiconductor device manufacture; Semiconductor devices; Steady-state; System testing; Thermal resistance;
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium, 1999. Fifteenth Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-5264-5
DOI :
10.1109/STHERM.1999.762445
