Title :
Extremely small active stripe laser diodes (EXSAS-LDs) for 17-channel low threshold array
Author :
Kitamura, Shotaro ; Asaki, Tatsuya S. ; Komatsu, Keiro ; Kitamura, Mitsuhiro
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
Summary form only given. Uniform 17-channel array of low threshold (3.5 mA, av.). 1.3 μm wavelength lasers was realized with submicron wide bulk active layers grown by selective MOVPE technique
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical fabrication; semiconductor growth; semiconductor laser arrays; vapour phase epitaxial growth; 1.3 mum; 1.8 mA; 17-channel low threshold array; InGaAsP; InGaAsP active layer; extremely small active stripe laser diodes; low threshold; selective MOVPE technique; submicron wide bulk active layers; wavelength lasers; Diodes; Epitaxial growth; Epitaxial layers; High speed optical techniques; Optical arrays; Optical control; Optical device fabrication; Semiconductor laser arrays; Temperature dependence; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519151
