DocumentCode
2775020
Title
Full-chip analysis method of ESD protection network
Author
Hayashi, Sachio ; Minami, Fumihiro ; Yamada, Masaaki
Author_Institution
Toshiba Corp. Semicond. Co., Japan
fYear
2004
fDate
2004
Firstpage
439
Lastpage
444
Abstract
With the advance of process technology, the electrostatic discharge (ESD) problem becomes more and more serious. To prevent design iterations caused by ESD failures, it is necessary to verify the ESD protection network at design stage. In this paper, we present a full-chip analysis method of the ESD protection network, which can analyze pad voltages for every pair of pads. Since the proposed method combines the merits of shortest path search and circuit simulation, it can analyze pad voltages more accurately than shortest path search, with a little overhead of run time. The experimental results show that the proposed method can predict the reduction effect of pad voltage by ESD remedies. And it is shown that for a chip with 858 pads, the proposed method can analyze pad voltages of every pair of pads within 2 hours.
Keywords
circuit simulation; electrostatic discharge; integrated circuit modelling; ESD failures; ESD protection network; electrostatic discharge problem; full-chip analysis method; pad pair voltage analysis; pad voltage reduction effect; Breakdown voltage; Circuit simulation; Electrostatic discharge; Impedance; Integrated circuit noise; Integrated circuit technology; MOSFETs; Microelectronics; Semiconductor device noise; Surge protection;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design, 2004. Proceedings. 5th International Symposium on
Print_ISBN
0-7695-2093-6
Type
conf
DOI
10.1109/ISQED.2004.1283713
Filename
1283713
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