Dual-wavelength mode-locked GaAs-based quantum-dot laser

Author

Cataluna, M.A. ; Nikitchev, D.I. ; Krestnikov, I. ; Livshits, D.A. ; Kovsh, A.R. ; Rafailov, E.U.

Author_Institution

Sch. of Eng., Phys. & Math., Univ. of Dundee, Dundee, UK

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

In this paper we report, for the first time to our knowledge, a dual-wavelength passive mode-locking regime where pulses are generated simultaneously from both ES (lambda=180 nm) and GS (lambda=1263 nm), in a two-section GaAs-based QD laser. This is the widest spectral separation (83 nm) ever observed in a dual-wavelength mode-locked non-vibronic laser. The exploitation of this mode-locked regime could enable a range of applications extending from time-domain spectroscopy, through to optical interconnects, wavelength-division multiplexing and ultrafast optical processing.

Keywords

III-V semiconductors; gallium arsenide; laser beams; laser mode locking; optical pulse generation; quantum dot lasers; semiconductor quantum dots; GaAs; dual-wavelength mode-locked laser; nonvibronic laser; optical interconnect; pulse generation; quantum-dot laser; time-domain spectroscopy; ultrafast optical processing; wavelength-division multiplexing; Diode lasers; Laser excitation; Laser mode locking; Laser theory; Laser transitions; Optical interconnections; Optical pulse generation; Optical saturation; Quantum dot lasers; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5191530

Filename

5191530