DocumentCode :
2775185
Title :
Generation rate dependence of carrier lifetime measurements in nanocrystalline silicon using transmission modulated photoconductive decay
Author :
Simonds, Brian J. ; Yan, Baojie ; Yue, Guozhen ; Ahrenkiel, Richard K. ; Taylor, P. Craig
Author_Institution :
Dept. of Phys., Colorado Sch. of Mines, Golden, CO, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
We investigate the decay of photoexcited carriers in nanocrystalline silicon as a function of generation rate. We use a non-contact method based on the conduction of a 500 MHz RF field called transmission modulated photoconductive decay (TMPCD). In order to interpret the results we employ a combination of theories based on the direct recombination of free-carriers and the effects of multiple trapping of carriers which exist in disordered materials. Our results show that free-carrier recombination can, to some extent, describe the decay dynamics, which occur at times shorter than our nanosecond pulse length. We establish this interpretation through its measured generation rate dependence. Also, it is shown that the theory of multiple trapping can accurately describe the behavior of the photoconductive decay that exists at times following the pulse even though this is not preceded by an establishment of a steady-state photoconductivity.
Keywords :
carrier lifetime; elemental semiconductors; photoconductivity; photoexcitation; silicon; Si; carrier lifetime measurements; decay dynamics; free carrier recombination; frequency 500 MHz; generation rate dependence; nanocrystalline silicon; noncontact method; photoexcited carrier decay; transmission modulated photoconductive decay;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5616574
Filename :
5616574
Link To Document :
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