Title :
High efficiency visible single mode laser diodes
Author :
Geels, Randall S. ; Plano, William E. ; Welch, David F.
Author_Institution :
Spectra Diode Labs., San Jose, CA, USA
Abstract :
We report low threshold and high efficiency operation of 660 nm band single mode InGaP QW laser diodes. The threshold currents are as low as 13 mA. External differential quantum efficiencies greater than 80% are reported
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser modes; quantum well lasers; 13 mA; 660 nm; 80 percent; InGaP; external differential quantum efficiencies; high efficiency operation; high efficiency visible single mode laser diodes; low threshold; quantum well lasers; single mode InGaP QW laser diodes; threshold currents; Coatings; Diode lasers; Laboratories; Laser modes; Power lasers; Printing; Quantum well lasers; Temperature; Testing; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519154
