Generation of high repetition frequency subpicosecond pulses at 1.535 μm by passive mode-locking of InGaAsP/InP laser diode with saturable absorber regions created by ion implantation

Author

Deryagin, A.G. ; Kuksenkov, D.V. ; Kuchinskii, V.I. ; Portnoi, E.L. ; Khrushchev, I.Yu. ; Frahm, J.

Author_Institution

A.F. Ioffe Physico-Tech. Inst., St. Petersburg, Russia

fYear

1994

fDate

19-23 Sep 1994

Firstpage

107

Lastpage

108

Abstract

Summary form only given. We report obtaining optical pulses 0.64 ps wide at a 104 GHz repetition rate from a passively mode-locked InGaAsP/InP laser diode. The laser emission spectrum corresponds to the amplification band of erbium-doped fiber amplifiers

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; ion implantation; laser cavity resonators; laser mode locking; optical pumping; optical saturable absorption; semiconductor lasers; 0.64 ps; 1.535 mum; InGaAsP-InP; InGaAsP/InP laser diode; amplification band; erbium-doped fiber amplifiers; high repetition frequency subpicosecond pulses; ion implantation; laser emission spectrum; optical pulses; passive mode-locking; saturable absorber regions; Diode lasers; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Frequency; Indium phosphide; Laser mode locking; Optical pulse generation; Optical pulses; Pulse amplifiers; Pulse generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location

Maui, HI

Print_ISBN

0-7803-1754-8

Type

conf

DOI

10.1109/ISLC.1994.519157

Filename

519157