Title :
Nanocomposite for Advanced Packaging of Microelectronics
Author :
Li, Yi ; Sun, Yangyang ; Zhu, Lingbo ; Xu, Jianwen ; Lu, Jiongxin ; Jiang, Hongjin ; Dong, Hai ; Wong, C.P.
Author_Institution :
Georgia Inst. of Technol., Atlanta
Abstract :
The advances of semiconductor technology are mainly due to the advances of polymeric materials. These include the use of polymers as adhesives(both conductive and non- conductive), interlayer dielectrics (low-k, low loss dielectrics), encapsulants (discrete and wafer level packaging), embedded passives (high-k and high-Q materials), superhydrophobic self-cleaning lotus effect surfaces, and etc. In this presentation, we will review some of the recent advances of polymeric materials and polymer nanocomposites currently being investigated for these types of applications, such as lead-free electrically conductive adhesives (ECAs) for fine pitch and high current density interconnects, flip chip and wafer level underfills, superhydrophobic self-cleaning lotus effect surfaces, as well as high-k and high-Q nanocomposites for embedded capacitors and inductors.
Keywords :
adhesives; dielectric thin films; fine-pitch technology; integrated circuit interconnections; nanocomposites; nanoelectronics; polymers; wafer level packaging; advanced polymeric materials; fine pitch interconnect technology; flip chip; high current density interconnects; high-Q nanocomposites; high-k nanocomposites; interlayer dielectrics; lead-free electrically conductive adhesives; low loss dielectrics; low-k dielectrics; microelectronics packaging; polymer nanocomposites; semiconductor technology; superhydrophobic self-cleaning lotus effect surfaces; wafer level packaging; wafer level underfills; Conducting materials; Dielectric losses; Dielectric materials; High K dielectric materials; High-K gate dielectrics; Microelectronics; Polymers; Semiconductor device packaging; Semiconductor materials; Wafer scale integration;
Conference_Titel :
Electronic Materials and Packaging, 2006. EMAP 2006. International Conference on
Conference_Location :
Kowloon
Print_ISBN :
978-1-4244-0834-4
Electronic_ISBN :
978-1-4244-0834-4
DOI :
10.1109/EMAP.2006.4430559