Title :
An inorganic approach to wet-chemical fabrication of 3rd generation tandem cells
Author_Institution :
Hong Kong Univ. of Sci. & Technol., Hong Kong
Abstract :
The article consists of a Powerpoint presentation on wet chemical fabrication for 3rd generation solar cell. The paper concludes that semiconducting metal oxides for 3rd generation solar cells; all wet-chemical fabrication process; multijunction tandem cells; Deposition of mixed-valence metal oxides for suitable band gaps; doping to control conduction type and conductivity in metal oxides; mixed-valence metal oxides and electrochemical deposition of metal oxides; heterovalence multijunction tandem cells; and demonstration of n-type Cu2O.
Keywords :
carrier density; copper compounds; electrical conductivity; electrochemical analysis; energy gap; grain size; printing; semiconductor doping; semiconductor heterojunctions; solar cells; wetting; 3rd generation tandem cells; Cu2O; band gap requirements; carrier concentration; doping aspects; electrochemical deposition; heterovalence multijunction tandem cells; inorganic approach; metal oxide conduction type; metal oxide conductivity; mixed-valence metal oxide deposition; mixed-valence metal oxides; semiconducting metal oxides; wet chemical fabrication process; Bonding; Cost function; Fabrication; Inorganic materials; Petroleum; Photonic band gap; Photovoltaic cells; Production; Semiconductor films; Thermodynamics;
Conference_Titel :
Electronic Materials and Packaging, 2006. EMAP 2006. International Conference on
Conference_Location :
Kowloon
Print_ISBN :
978-1-4244-0834-4
Electronic_ISBN :
978-1-4244-0834-4
DOI :
10.1109/EMAP.2006.4430577
