W-band monolithic mixer using InAlAs/InGaAs HEMT

Author

Kwon, Y. ; Pavlidis, D. ; Tutt, M. ; Ng, G.I. ; Brock, T.

Author_Institution

Michigan Univ., Ann Arbor, MI, USA

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

181

Lastpage

184

Abstract

A W-band monolithic mixer is designed and fabricated using InAlAs/InGaAs HEMT technology. The advantages of this material system compared with AlGaAs/GaAs are: (i) larger conduction band discontinuity (0.5 eV versus 0.24 eV for AlGaAs/GaAs) and therefore better carrier confinement, (ii) higher low-field mobility, and (iii) higher peak velocity. The combination of these features results in a better performance and operation capability in the submillimeter wave range. The design procedure and the circuit performance are described. A very low LO (local oscillator) power requirement is demonstrated with 13.5-dB conversion loss and only -6 dBm LO drive at 95 GHz.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; mixers (circuits); 0.5 eV; 13.5 dB; 95 GHz; HEMT; InAlAs-InGaAs; W-band; carrier confinement; conduction band discontinuity; conversion loss; low-field mobility; mixer; peak velocity; submillimeter wave range; Carrier confinement; Circuit optimization; Conducting materials; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Local oscillators; Submillimeter wave circuits; Submillimeter wave devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175481

Filename

175481