DocumentCode :
2777285
Title :
Quantum confinement in the photoluminescence of nanocrystalline porous silicon
Author :
Stavarache, I. ; Ciurea, M.L. ; Iancu, V.
Author_Institution :
National Inst. of Mater. Phys., Bucharest, Romania
Volume :
1
fYear :
2005
fDate :
3-5 Oct. 2005
Firstpage :
55
Abstract :
The paper presents the photoluminescence of nanocrystalline porous silicon. Two maxima were observed for rather fresh samples, one located at the infrared edge of the visible range and the other one in red. After ageing, the first maximum vanishes, suggesting its relation with the surface states, while the red one undergoes a significant blue shift. A simple quantum confinement model allows to correlate the photon energy of the red maximum with a transition between two confinement levels and to interpret the blue shift in terms of size reduction by oxidation. These results are in good agreement with previous microstructure measurements.
Keywords :
ageing; elemental semiconductors; infrared spectra; nanostructured materials; oxidation; porous materials; silicon; spectral line shift; surface states; visible spectra; Si; ageing; blue shift; oxidation; photoluminescence; photon energy; quantum confinement; surface states; Biomedical optical imaging; Biosensors; Microstructure; Oxidation; Photoluminescence; Physics; Potential well; Scanning electron microscopy; Silicon; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Print_ISBN :
0-7803-9214-0
Type :
conf
DOI :
10.1109/SMICND.2005.1558708
Filename :
1558708
Link To Document :
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