DocumentCode
2777335
Title
Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers
Author
Shiao, Hung-Pin ; Lin, Wei ; Chen, Jian-Guan ; Tu, Yuan-Kuag ; Lee, Ching-Ting
Author_Institution
Inst. of Opt. Sci., Nat. Central Univ., Chung-Li, Taiwan
fYear
1994
fDate
19-23 Sep 1994
Firstpage
121
Lastpage
122
Abstract
Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87% and internal waveguide loss of 6.33 cm-1
Keywords
Debye temperature; III-V semiconductors; gallium arsenide; indium compounds; optical losses; optical pumping; quantum well lasers; 170 K; 87 percent; Al-free quantum well lasers; InGaAs-GaAs-InGaP; InGaAs/GaAs/InGaP strained-quantum-well lasers; InGaAsP; InGaAsP transition layers; as-cleaved laser; high characteristic temperature; internal quantum efficiency; internal waveguide loss; Chemical lasers; Erbium-doped fiber lasers; Gallium arsenide; Indium gallium arsenide; Laser theory; Laser transitions; Pump lasers; Quantum well lasers; Temperature; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location
Maui, HI
Print_ISBN
0-7803-1754-8
Type
conf
DOI
10.1109/ISLC.1994.519164
Filename
519164
Link To Document