DocumentCode
2777495
Title
GaInP-crossed-coupled-cavity-laser (XCCL) for investigation of strain effects and GaInP superlattice ordering
Author
Barth, F. ; Forstmann, G. ; Nagel, S. ; Gen, C. ; Scholz, F. ; Schweizer, H. ; O´Reilly, E. ; Pilkuhn, M.
Author_Institution
4. Phys. Inst., Stuttgart Univ., Germany
fYear
1994
fDate
19-23 Sep 1994
Firstpage
123
Lastpage
124
Abstract
Summary form only given. An anistropy of GaInP lasers with CuPt-type superlattice was observed in polarization of laser emission. This effect can be understood with direction dependent transition matrix elements. A XCCL device is used for testing anisotropic properties
Keywords
III-V semiconductors; deformation; gallium compounds; indium compounds; laser cavity resonators; light polarisation; optical couplers; semiconductor lasers; semiconductor superlattices; GaInP; GaInP superlattice ordering; GaInP-crossed-coupled-cavity-laser; anisotropic properties; direction dependent transition matrix elements; laser emission polarisation; semiconductor lasers; strain effects; Capacitive sensors; Demultiplexing; Laser theory; Optical polarization; Optical superlattices; Power lasers; Solid state circuits; Tellurium; Tensile strain; Wavelength converters;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location
Maui, HI
Print_ISBN
0-7803-1754-8
Type
conf
DOI
10.1109/ISLC.1994.519165
Filename
519165
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