DocumentCode
2777631
Title
Investigation into cratering issue at the Au/Al interface for the thermosonic flip chip process
Author
Ngar Chun Hung ; Ching Yuen To ; Yee Man Mak ; Jun Qi ; Ming Li
Author_Institution
ASM Assembly Autom. Ltd., Hong Kong
fYear
2006
fDate
11-14 Dec. 2006
Abstract
One of the key factors of cratering and damages on the chips during the TSFC process is: formation of AuAl IMC, which can be controlled by TS bond power and stud bumping temperature. Proposed solutions for reducing the damages during the process: stud bumping on substrates instead of the chips with Al-pads; and keeping the stud bumping temperature at 120 °C or below.
Keywords
electronics packaging; flip-chip devices; substrates; Au-Al; chip cratering; chip damage; stud bumping temperature; substrate; temperature 120 C; thermosonic bond power; thermosonic flip chip process; Annealing; Artificial intelligence; Dielectric substrates; Etching; Flip chip; Gold; Silicon; Temperature; Testing; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Materials and Packaging, 2006. EMAP 2006. International Conference on
Conference_Location
Kowloon
Print_ISBN
978-1-4244-0833-7
Type
conf
DOI
10.1109/EMAP.2006.4430634
Filename
4430634
Link To Document