Electromagnetic modeling of micromachined GaN thin films for FBAR applications

Author

Neculoiu, D. ; Konstantinidis, G. ; Mutamba, K. ; Takacs, A. ; Vasilache, D. ; Sydlo, C. ; Kostopoulos, T. ; Stavrinidis, A. ; Müller, A.

Author_Institution

IMT, Bucharest, Romania

Volume

1

fYear

2005

fDate

3-5 Oct. 2005

Firstpage

119

Abstract

The paper presents a new electromagnetic modeling approach for FBAR structures that integrates the piezoelectric/acoustic effects into a commercial Zeland IE3D electromagnetic simulator. An analytic dispersion model describes the piezoelectric material frequency dependent effective permittivity. Several GaN based test structures were fabricated using bulk micromachining technologies. From microwave measurements the model parameters were extracted.

Keywords

III-V semiconductors; acoustic resonators; bulk acoustic wave devices; gallium compounds; micromachining; permittivity; piezoelectricity; semiconductor device models; semiconductor thin films; FBAR; GaN; acoustic effect; analytic dispersion model; bulk micromachining; commercial Zeland IE3D electromagnetic simulator; electromagnetic modeling; microwave measurement; permittivity; piezoelectric effect; piezoelectric material frequency; thin film; Acoustic testing; Dispersion; Electromagnetic modeling; Film bulk acoustic resonators; Frequency dependence; Gallium nitride; Permittivity; Piezoelectric films; Piezoelectric materials; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International

Print_ISBN

0-7803-9214-0

Type

conf

DOI

10.1109/SMICND.2005.1558725

Filename

1558725