Title :
Electromagnetic modeling of micromachined GaN thin films for FBAR applications
Author :
Neculoiu, D. ; Konstantinidis, G. ; Mutamba, K. ; Takacs, A. ; Vasilache, D. ; Sydlo, C. ; Kostopoulos, T. ; Stavrinidis, A. ; Müller, A.
Author_Institution :
IMT, Bucharest, Romania
Abstract :
The paper presents a new electromagnetic modeling approach for FBAR structures that integrates the piezoelectric/acoustic effects into a commercial Zeland IE3D electromagnetic simulator. An analytic dispersion model describes the piezoelectric material frequency dependent effective permittivity. Several GaN based test structures were fabricated using bulk micromachining technologies. From microwave measurements the model parameters were extracted.
Keywords :
III-V semiconductors; acoustic resonators; bulk acoustic wave devices; gallium compounds; micromachining; permittivity; piezoelectricity; semiconductor device models; semiconductor thin films; FBAR; GaN; acoustic effect; analytic dispersion model; bulk micromachining; commercial Zeland IE3D electromagnetic simulator; electromagnetic modeling; microwave measurement; permittivity; piezoelectric effect; piezoelectric material frequency; thin film; Acoustic testing; Dispersion; Electromagnetic modeling; Film bulk acoustic resonators; Frequency dependence; Gallium nitride; Permittivity; Piezoelectric films; Piezoelectric materials; Transistors;
Conference_Titel :
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Print_ISBN :
0-7803-9214-0
DOI :
10.1109/SMICND.2005.1558725
