Low-threshold strained-layer quantum-well 630-nm AlGaInP LDs and relative intensity of strain-induced polarization mode

Author

Tanaka, T. ; Yanagisawa, H. ; Kawanaka, S. ; Minagawa, S.

Author_Institution

Central Res. Lab., Hitachi Ltd., Kokubunji, Japan

fYear

1994

fDate

19-23 Sep 1994

Firstpage

125

Lastpage

126

Abstract

Summary form only given. Low-threshold CW operation of 630-nm AlGaInP LDs with compressive- or tensile-strained quantum-well structures is investigated. In addition, the correlation between the threshold current and polarization-mode intensity is discussed in terms of strain effects and injected carrier density

Keywords

III-V semiconductors; aluminium compounds; deformation; gallium compounds; indium compounds; laser modes; light polarisation; optical correlation; quantum well lasers; 630 nm; AlGaInP; CW operation; compressive-strained quantum-well structures; correlation; injected carrier density; low-threshold; polarization-mode intensity; relative intensity; strain effects; strain-induced polarization mode; strained-layer quantum-well 630-nm AlGaInP LDs; tensile-strained quantum-well structures; threshold current; Capacitive sensors; Charge carrier density; Electrons; Lattices; Polarization mode dispersion; Quantum well lasers; Quantum wells; Semiconductor lasers; Strain control; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location

Maui, HI

Print_ISBN

0-7803-1754-8

Type

conf

DOI

10.1109/ISLC.1994.519166

Filename

519166