Title :
Low-threshold strained-layer quantum-well 630-nm AlGaInP LDs and relative intensity of strain-induced polarization mode
Author :
Tanaka, T. ; Yanagisawa, H. ; Kawanaka, S. ; Minagawa, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
Summary form only given. Low-threshold CW operation of 630-nm AlGaInP LDs with compressive- or tensile-strained quantum-well structures is investigated. In addition, the correlation between the threshold current and polarization-mode intensity is discussed in terms of strain effects and injected carrier density
Keywords :
III-V semiconductors; aluminium compounds; deformation; gallium compounds; indium compounds; laser modes; light polarisation; optical correlation; quantum well lasers; 630 nm; AlGaInP; CW operation; compressive-strained quantum-well structures; correlation; injected carrier density; low-threshold; polarization-mode intensity; relative intensity; strain effects; strain-induced polarization mode; strained-layer quantum-well 630-nm AlGaInP LDs; tensile-strained quantum-well structures; threshold current; Capacitive sensors; Charge carrier density; Electrons; Lattices; Polarization mode dispersion; Quantum well lasers; Quantum wells; Semiconductor lasers; Strain control; Tensile strain;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519166
