DocumentCode :
2777687
Title :
Microstructures and Electrical Properties of Tin Oxide Formed Under Fretting Conditions
Author :
Hong, Jin-Won ; Kim, Myoung-Sik ; Bae, Kyoo-Sik
Author_Institution :
Univ. of Suwon, Suwon
fYear :
2006
fDate :
11-14 Dec. 2006
Firstpage :
1
Lastpage :
16
Abstract :
Large quantities of Sn and O (contaminated with C) were found to accumulate on the contact surface of pogo pins after about 50,000 test cycles. Sn appears to be transferred and then oxidized, resulting in the increase of contact resistance(Rc) of pogo pins. The electrical resistivity of sintered SnO2 thick films was found to increase, as the temperature decreased below 20degC . This fact may explain higher contact resistance(Rc) measured at the low-temperature tests. However, after Sn was transferred, how it was oxidized and whether the Sn oxide was SnO or SnO2 (or mixed) are yet unclear. Detailed fretting corrosion processes are now under investigation.
Keywords :
electrical resistivity; electronics packaging; wear; contact resistance; electrical resistivity; fretting condition; fretting corrosion process; pogo pin; sintered thick film; tin oxide electrical property; tin oxide microstructure property; Contacts; Electric resistance; Electrical resistance measurement; Microstructure; Pins; Surface contamination; Temperature; Testing; Thick films; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Materials and Packaging, 2006. EMAP 2006. International Conference on
Conference_Location :
Kowloon
Print_ISBN :
978-1-4244-0834-4
Electronic_ISBN :
978-1-4244-0834-4
Type :
conf
DOI :
10.1109/EMAP.2006.4430637
Filename :
4430637
Link To Document :
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