• DocumentCode
    2777780
  • Title

    Ultrasonic spray pyrolysis of CZTS solar cell absorber layers and characterization studies

  • Author

    Prabhakar, Tejas ; Nagaraju, J.

  • Author_Institution
    Dept. of Instrum., Indian Inst. of Sci., Bangalore, India
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    CZTS (Copper Zinc Tin Sulphide) is a wide band gap quartnery chalcopyrite which has a band gap of about 1.45 eV and an absorption coefficient of 104 cm-1; thus making it an ideal material to be used as an absorber layer in solar cells. Ultrasonic Spray Pyrolysis is a deposition technique, where the solution is atomized ultrasonically, thereby giving a fine mist having a narrow size distribution which can be used for uniform coatings on substrates. An Ultrasonic Spray Pyrolysis equipment was developed and CZTS absorber layers were successfully grown with this technique on soda lime glass substrates using aqueous solutions. Substrate temperatures ranging from 523 K to 723 K were used to deposit the CZTS layers and these films were characterized using SEM, EDAX and XRD. It was observed that the film crystallized in the kesterite structure and the best crystallites were obtained at 613 K. It was observed that the grain size progressively increased with temperature. The optical band gap of the material was obtained as 1.54 eV.
  • Keywords
    X-ray chemical analysis; X-ray diffraction; calcium compounds; copper compounds; glass; grain size; pyrolysis; scanning electron microscopy; silicon compounds; sodium compounds; solar absorber-convertors; solar cells; substrates; tin compounds; zinc compounds; CZTS solar cell absorber layers; Cu2ZnSnSe4; EDAX; Na2O-CaO-SiO2; SEM; XRD; copper zinc tin sulphide; glass substrates; grain size; kesterite structure; optical band gap; size distribution; soda lime glass; temperature 523 K to 723 K; ultrasonic spray pyrolysis; uniform coatings; wide band gap quartnery chalcopyrite;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5616709
  • Filename
    5616709