DocumentCode
277786
Title
Design of low-distortion HF transmitter with power MOSFETs
Author
Tozawa, Yoji
Author_Institution
Japan Radio Co. Ltd., Tokyo, Japan
fYear
1991
fDate
22-25 Jul 1991
Firstpage
316
Lastpage
320
Abstract
A 2-kW, 3-kW, 5-kW and 10-kW HF transmitter has been developed using the newest power MOSFETs in its final device and a single-ended push-pull (SEPP) circuit. The transmitter combines the output powers from a plurality of power amplifier (PA) modules to obtain a low-distortion output power
Keywords
insulated gate field effect transistors; power transistors; radio transmitters; 10 kW; 2 kW; 3 kW; 5 kW; low-distortion HF transmitter; power MOSFETs; single ended push-pull circuit;
fLanguage
English
Publisher
iet
Conference_Titel
HF Radio Systems and Techniques, 1991., Fifth International Conference on
Conference_Location
Edinburgh
Type
conf
Filename
175916
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