Title :
Design of low-distortion HF transmitter with power MOSFETs
Author_Institution :
Japan Radio Co. Ltd., Tokyo, Japan
Abstract :
A 2-kW, 3-kW, 5-kW and 10-kW HF transmitter has been developed using the newest power MOSFETs in its final device and a single-ended push-pull (SEPP) circuit. The transmitter combines the output powers from a plurality of power amplifier (PA) modules to obtain a low-distortion output power
Keywords :
insulated gate field effect transistors; power transistors; radio transmitters; 10 kW; 2 kW; 3 kW; 5 kW; low-distortion HF transmitter; power MOSFETs; single ended push-pull circuit;
Conference_Titel :
HF Radio Systems and Techniques, 1991., Fifth International Conference on
Conference_Location :
Edinburgh
