Microtechnology with SILAR and RPP for semiconductor oxide gas sensors

Author

Shishiyanu, Sergiu T. ; Shishiyanu, Teodor S. ; Lupan, Oleg I.

Author_Institution

Dept. of Microelectron. & Semicond. Devices, Tech. Univ. of Moldova, Chisinau, Moldova

Volume

1

fYear

2005

fDate

3-5 Oct. 2005

Firstpage

205

Abstract

Microtechnology with Successive Ionic Layer Adsorption and Reaction (SILAR) technique and rapid photothermal processing (RPP) was elaborated and applied for semiconductor oxides gas sensors. The experimental results shown that by RPP is possible to control the surface morphology, photoluminescence, sensing properties and operating temperature of impurity doped zinc oxide thin films. The highest sensitivity to 1.5 ppm NO₂ was obtained for 5 - 10 at.% Sn concentration in the solution of ions and RPP temperature of 550-650°C.

Keywords

II-VI semiconductors; adsorption; gas sensors; impurities; photoluminescence; photothermal effects; surface morphology; wide band gap semiconductors; zinc compounds; 550 to 650 degC; Microtechnology; SILAR; ZnO; operating temperature; photoluminescence; rapid photothermal processing; semiconductor oxide gas sensors; sensing properties; successive ionic layer adsorption reaction technique; surface morphology; Gas detectors; Glass; Scanning electron microscopy; Sputtering; Substrates; Surface morphology; Temperature sensors; Thin film sensors; Tin; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International

Print_ISBN

0-7803-9214-0

Type

conf

DOI

10.1109/SMICND.2005.1558748

Filename

1558748