Phase Evalution in the Phosphorous-rich Layer Formation for SnAgCu/Ni-P Join

Author

Lin, Y.C. ; Wang, K.J. ; Duh, J.G.

fYear

2006

fDate

11-14 Dec. 2006

Firstpage

1

Lastpage

23

Abstract

In microelectronic package, interfacial reaction between solders and under bump metallizations (UBM) is very important in the joint reliability. In this study, interfacial morphologies and microstructure of Sn-3Ag-0.5Cu/Ni-P UBM with various phosphorous contents were investigated by field emission electron probe microanalyzer (FE-EPMA). Through contrast control technique in the BEI mode along with series of quantitative analysis phase evolution of P-rich layers was investigated. In addition, a possible formation mechanism of Ni₂SnP layer was proposed.

Keywords

chemical analysis; copper alloys; field emission electron microscopy; integrated circuit packaging; integrated circuit reliability; interface structure; metallisation; nickel alloys; phosphorus alloys; silver alloys; solders; tin alloys; FE-EPMA; Ni₂SnP; P-rich layers; SnAgCu-Ni-P; UBM microstructure; contrast control technique; field emission electron probe microanalyzer; interfacial morphologies; interfacial reaction; joint reliability; microelectronic package; microstructure; phosphorous-rich layer formation; quantitative analysis phase evolution; solders; under bump metallizations; Electron emission; Metallization; Microelectronics; Microstructure; Morphology; Packaging; Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Materials and Packaging, 2006. EMAP 2006. International Conference on

Conference_Location

Kowloon

Print_ISBN

978-1-4244-0834-4

Electronic_ISBN

978-1-4244-0834-4

Type

conf

DOI

10.1109/EMAP.2006.4430658

Filename

4430658