DocumentCode
2778036
Title
Low threshold current 780 nm InAlGaAs/AlGaAs-strained QW lasers and the integration with a passive, non-absorbing tapered mode-size transformer
Author
Vermeire, G. ; Vermaerke, F. ; Baets, R. ; Van Daele, P. ; Demeester, P.
Author_Institution
Dept. of Inf. Technol., Gent Univ., Gent, Belgium
fYear
1994
fDate
19-23 Sep 1994
Firstpage
129
Lastpage
130
Abstract
Summary form only given. In AlGaAs/AlGaAs QW lasers operating at 780 nm have been realised with threshold currents down to 8.2 mA. The monolithic integration with a passive, non-absorbing mode-size transformer has been demonstrated for the first time
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; integrated optoelectronics; laser modes; quantum well lasers; 780 nm; 8.2 mA; InAlGaAs-AlGaAs; InAlGaAs/AlGaAs-strained QW lasers; low threshold current; monolithic integration; passive nonabsorbing tapered mode-size transformer integration; Aluminum; Gallium arsenide; Indium gallium arsenide; Information technology; Laser modes; Mirrors; Optical losses; Pump lasers; Semiconductor lasers; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location
Maui, HI
Print_ISBN
0-7803-1754-8
Type
conf
DOI
10.1109/ISLC.1994.519168
Filename
519168
Link To Document