Title :
0.78-0.98 μm ridge-waveguide-lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD
Author :
Shima, A. ; Takemoto, A. ; Kizuki, H. ; Karakida, S. ; Miyashita, M. ; Nagai, Y. ; Kamizato, T. ; Omura, E. ; Otsubo, M.
Author_Institution :
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Ridge-waveguide laser diodes (LD´s) buried with an Al0.7Ga0.3As confinement layer selectively grown by using the Cl-assisted MOCVD have realized, for the first time, reduction of the operating current, stabilization of the lateral mode and the high reliability in the high-power operation
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser modes; optical fabrication; ridge waveguides; semiconductor lasers; vapour phase epitaxial growth; waveguide lasers; 0.78 to 0.98 mum; Al0.7Ga0.3As confinement layer; AlGaAs; MOCVD; high-power operation; laser diodes; lateral mode; operating current; reliability; ridge-waveguide-lasers; stabilization; Etching; Gallium arsenide; MOCVD; Quantum well devices; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519169
