• DocumentCode
    2778233
  • Title

    0.78-0.98 μm ridge-waveguide-lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD

  • Author

    Shima, A. ; Takemoto, A. ; Kizuki, H. ; Karakida, S. ; Miyashita, M. ; Nagai, Y. ; Kamizato, T. ; Omura, E. ; Otsubo, M.

  • Author_Institution
    Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan
  • fYear
    1994
  • fDate
    19-23 Sep 1994
  • Firstpage
    131
  • Lastpage
    132
  • Abstract
    Ridge-waveguide laser diodes (LD´s) buried with an Al0.7Ga0.3As confinement layer selectively grown by using the Cl-assisted MOCVD have realized, for the first time, reduction of the operating current, stabilization of the lateral mode and the high reliability in the high-power operation
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser modes; optical fabrication; ridge waveguides; semiconductor lasers; vapour phase epitaxial growth; waveguide lasers; 0.78 to 0.98 mum; Al0.7Ga0.3As confinement layer; AlGaAs; MOCVD; high-power operation; laser diodes; lateral mode; operating current; reliability; ridge-waveguide-lasers; stabilization; Etching; Gallium arsenide; MOCVD; Quantum well devices; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1994., 14th IEEE International
  • Conference_Location
    Maui, HI
  • Print_ISBN
    0-7803-1754-8
  • Type

    conf

  • DOI
    10.1109/ISLC.1994.519169
  • Filename
    519169
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2778233