Title :
Strained layer single quantum well InGaAs lasers with room temperature CW threshold current 165 μA
Author :
Chen, Tiffani R. ; Zhao, Bin ; Eng, L.E. ; Zhuang, Y.H. ; Yariv, Amnon
Author_Institution :
Thomas J. Watson Lab. of Appl. Phys., California Inst. of Technol., Pasadena, CA
Abstract :
A record low threshold current 165 μA (CW) at room temperature has been demonstrated in a buried heterostructure strained layer single quantum well InGaAs laser with short cavity length and high reflectivity coatings
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser mirrors; optical films; quantum well lasers; 165 muA; 298 K; CW threshold current; InGaAs; InGaAs lasers; buried heterostructure strained layer laser; cavity length; high reflectivity coatings; room temperature; strained layer single quantum well lasers; Coatings; Electrons; Indium gallium arsenide; Laser theory; Mirrors; Quantum well lasers; Reflectivity; Strontium; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519170
