DocumentCode
2778415
Title
Strained layer single quantum well InGaAs lasers with room temperature CW threshold current 165 μA
Author
Chen, Tiffani R. ; Zhao, Bin ; Eng, L.E. ; Zhuang, Y.H. ; Yariv, Amnon
Author_Institution
Thomas J. Watson Lab. of Appl. Phys., California Inst. of Technol., Pasadena, CA
fYear
1994
fDate
19-23 Sep 1994
Firstpage
133
Lastpage
134
Abstract
A record low threshold current 165 μA (CW) at room temperature has been demonstrated in a buried heterostructure strained layer single quantum well InGaAs laser with short cavity length and high reflectivity coatings
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser mirrors; optical films; quantum well lasers; 165 muA; 298 K; CW threshold current; InGaAs; InGaAs lasers; buried heterostructure strained layer laser; cavity length; high reflectivity coatings; room temperature; strained layer single quantum well lasers; Coatings; Electrons; Indium gallium arsenide; Laser theory; Mirrors; Quantum well lasers; Reflectivity; Strontium; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location
Maui, HI
Print_ISBN
0-7803-1754-8
Type
conf
DOI
10.1109/ISLC.1994.519170
Filename
519170
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