DocumentCode
2778602
Title
Photoluminescence in CdIn/sub 2/O/sub 4/ and CdGa/sub 2/O/sub 4/
Author
Zhitar, V. ; Muntean, S. ; Volodina, G. ; Arama, E. ; Shemyakova, T.
Author_Institution
Inst. of Appl. Phys., Acad. of Sci. of the Republic of Moldova, Chisinau
Volume
2
fYear
2005
fDate
5-5 Oct. 2005
Firstpage
301
Abstract
Crystalline samples of CdIn2O4 and CdGa2O4 of cubic syngony have been prepared using a method similar to that commonly used for preparation of ceramic materials. Photoluminescence spectra measured at temperature 77 and 300 K under Ar laser excitation consist of intensive narrow red bands generated due to recombination involving centers defined by the intrinsic defect structure
Keywords
cadmium compounds; ceramics; defect states; photoluminescence; 300 K; 77 K; Ar laser excitation; CdGa2O4; CdIn2O4; ceramic materials; crystalline samples; intrinsic defect structure; photoluminescence; Annealing; Argon; Ceramics; Crystalline materials; Crystals; Laser excitation; Optical materials; Photoluminescence; Temperature measurement; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Conference_Location
Sinaia
Print_ISBN
0-7803-9214-0
Type
conf
DOI
10.1109/SMICND.2005.1558784
Filename
1558784
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