DocumentCode :
2778619
Title :
Mode selection in GaAs micropillar polariton lasers
Author :
Maragkou, M. ; Grundy, A.J.D. ; Wertz, E. ; Bloch, J. ; Lagoudakis, P.G.
Author_Institution :
Sch. of Phys. & Astron., Univ. of Southampton, Southampton, UK
fYear :
2009
fDate :
14-19 June 2009
Firstpage :
1
Lastpage :
1
Abstract :
Semiconductor micropillars offer an interesting way of studying polaritons in zero-dimensional cavities. In such cavities, photons are confined vertically, by the Bragg mirrors, and laterally by the index of refraction contrast between the air and the semiconductor. Zero dimensional polariton modes are the result of this three-dimensional confinement. The first observation of polariton lasing in a GaAs micropillar showed single mode operation, with lasing from the lowest energy mode in the system. We demonstrate that by careful engineering of the system, competing relaxation mechanisms can be used to achieve lasing from higher energy modes.
Keywords :
III-V semiconductors; gallium arsenide; laser cavity resonators; laser mirrors; laser modes; polaritons; refractive index; semiconductor lasers; Bragg mirrors; GaAs; high energy modes; index of refraction; polariton lasing mechanism; relaxation mechanism; semiconductor micropillars; single mode operation; three-dimensional confinement; vertically confined photons; zero dimensional polariton mode cavities; Charge carrier density; Excitons; Gallium arsenide; Laser modes; Laser theory; Microcavities; Optical scattering; Particle scattering; Reservoirs; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
Type :
conf
DOI :
10.1109/CLEOE-EQEC.2009.5191709
Filename :
5191709
Link To Document :
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