Title :
Highly efficient edge terminations for diamond schottky diodes
Author :
Brezeanu, M. ; Rashid, S.J. ; Butler, T. ; Rupesinghe, N.L. ; Udrea, F. ; Garraway, A. ; Coubeck, L. ; Taylor, P. ; Amaratunga, G.A.J. ; Twitchen, D.J. ; Tajani, A. ; Dixon, M.P.
Author_Institution :
Dept. of Eng., Cambridge Univ.
Abstract :
Two termination structures suitable for diamond Schottky diodes are presented in this paper. A thorough comparison between the two structures, concerning both electrical and geometrical aspects, is included. The study is based on theoretical models and extensive numerical results. High termination efficiencies, up to 93%, are reported
Keywords :
MIS structures; Schottky barriers; Schottky diodes; diamond; elemental semiconductors; C; MIS structure; Schottky barrier diodes; breakdown voltage; diamond; insulator electric field; Anodes; Cathodes; Chemicals; Material properties; Numerical models; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Temperature;
Conference_Titel :
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-9214-0
DOI :
10.1109/SMICND.2005.1558789
