• DocumentCode
    2778709
  • Title

    Interpreting fitting parameters of temperature dependence of dark currents in some CCDs

  • Author

    Bodegom, E. ; Widenhorn, R. ; lordache, D.A.

  • Author_Institution
    Dept. of Phys., Portland State Univ., OR
  • Volume
    2
  • fYear
    2005
  • fDate
    5-5 Oct. 2005
  • Firstpage
    327
  • Abstract
    The experimental results concerning the temperature dependence of the dark currents in some charge-coupled devices (CCDs) were analyzed. It was found that the used theoretical model allows: (i) the evaluation of the lowest limit of experimental errors (involving the systematic ones), (ii) the study of Meyer-Neldel relations, pointing out the high correlation of diffusion dark currents with the energy-gap Eg, unlike the corresponding weak correlation of depletion dark currents (iii) rather accurate assignments of the obtained values of deep-level traps energies to some specific impurities
  • Keywords
    charge-coupled devices; dark conductivity; deep levels; diffusion; energy gap; CCD; Meyer-Neldel relations; charge-coupled devices; dark currents; deep-level traps; depletion currents; diffusion currents; energy-gap; Charge carrier processes; Charge coupled devices; Dark current; Electron traps; Electronic mail; Energy states; Physics; Predictive models; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-9214-0
  • Type

    conf

  • DOI
    10.1109/SMICND.2005.1558791
  • Filename
    1558791