DocumentCode
2778709
Title
Interpreting fitting parameters of temperature dependence of dark currents in some CCDs
Author
Bodegom, E. ; Widenhorn, R. ; lordache, D.A.
Author_Institution
Dept. of Phys., Portland State Univ., OR
Volume
2
fYear
2005
fDate
5-5 Oct. 2005
Firstpage
327
Abstract
The experimental results concerning the temperature dependence of the dark currents in some charge-coupled devices (CCDs) were analyzed. It was found that the used theoretical model allows: (i) the evaluation of the lowest limit of experimental errors (involving the systematic ones), (ii) the study of Meyer-Neldel relations, pointing out the high correlation of diffusion dark currents with the energy-gap Eg, unlike the corresponding weak correlation of depletion dark currents (iii) rather accurate assignments of the obtained values of deep-level traps energies to some specific impurities
Keywords
charge-coupled devices; dark conductivity; deep levels; diffusion; energy gap; CCD; Meyer-Neldel relations; charge-coupled devices; dark currents; deep-level traps; depletion currents; diffusion currents; energy-gap; Charge carrier processes; Charge coupled devices; Dark current; Electron traps; Electronic mail; Energy states; Physics; Predictive models; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Conference_Location
Sinaia
Print_ISBN
0-7803-9214-0
Type
conf
DOI
10.1109/SMICND.2005.1558791
Filename
1558791
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