DocumentCode
2778796
Title
Silicon carbide (SiC): a short history. an analytical approach for SiC power device design
Author
Brezeanu, G.
Author_Institution
Univ. Politechnica Bucharest
Volume
2
fYear
2005
fDate
5-5 Oct. 2005
Firstpage
345
Abstract
As this year we celebrate a century since the discovery of Silicon Carbide, a short history of semiconductor material is presented in the first part of the paper. Design guidelines, based on simple analytical expressions, for ideal structures of high power SiC Schottky barrier diodes (SBD), are also included
Keywords
Schottky diodes; history; power semiconductor diodes; silicon compounds; wide band gap semiconductors; SiC; breakdown voltage; power Schottky barrier diodes; power device design; semiconductor material; silicon carbide; Abrasives; Crystalline materials; Crystallization; Crystals; Guidelines; History; Light emitting diodes; Physics; Semiconductor materials; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Conference_Location
Sinaia
Print_ISBN
0-7803-9214-0
Type
conf
DOI
10.1109/SMICND.2005.1558796
Filename
1558796
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