Title :
Breakdown performances improvements of SiC diodes using high-k dielectrics
Author :
Brezeanu, G. ; Badila, M. ; Brezeanu, M. ; Udrea, F. ; Boianceanu, C. ; Enache, I. ; Draghici, F. ; Visioreanu, A.
Author_Institution :
Bucharest Univ.
Abstract :
A classical implementation of the field plate technique is the oxide ramp termination. This paper presents improvements of the efficiency of this termination for SiC Schottky barrier diodes, obtained by using high-k dielectrics. The effect of the relative dielectrics permittivity and ramp parameters are investigated for punch-through and non punch-through devices. Optimal structure termination parameters were identified
Keywords :
Schottky diodes; permittivity; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; Schottky barrier diodes; SiC; breakdown performances; dielectrics permittivity; field plate technique; high-k dielectrics; non punch-through devices; optimal structure termination parameters; oxide ramp termination; Anodes; Dielectric breakdown; Dielectric devices; Dielectric substrates; High-K gate dielectrics; Permittivity; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide;
Conference_Titel :
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-9214-0
DOI :
10.1109/SMICND.2005.1558799
