• DocumentCode
    2778890
  • Title

    High efficiency CdSe quantum-dot sensitized solar cells

  • Author

    Zheng, Zhi ; Zhao, Linan ; Wang, Marilyn ; Liu, Minling ; Marcus, Matthew S. ; Liu, Yue

  • Author_Institution
    Honeywell Sensors & Wireless Labs., Honeywell Int., Inc., Minneapolis, MN, USA
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    High quality CdSe quantum-dot (QD) sensitized solar cells have been successfully fabricated by in-situ deposition of QDs into TiO2 nanoporous electron conductor (EC) films using a near room-temperature solution-based chemical bath deposition (CBD) method. An energy conversion efficiency of 4.44% under AM1.5G illumination is achieved on a device fabricated using CdSe QDs as a light absorber, TiO2 nanoparticles as an electron-conducting film, and a Polysulfide Na2S/S based electrolyte as a hole-conductor. Results also show that incident photo conversion efficiency (IPCE) of above 70% was obtained within a majority of the CdSe QD absorption spectrum range, and a peak value of 83% between 500-550nm. The light harvesting efficiency of the QD in the device is evaluated to between 75-85% in the same spectral range, indicating an internal quantum efficiency of greater than 95% was achieved. These results are among the best reported to date of the QD-based solar cells. We present data from prototype devices of various EC film thicknesses, morphologies, material composites, as well as QD deposition conditions and hole conductor variations and show how they impact key device metrics.
  • Keywords
    cadmium compounds; chemical vapour deposition; semiconductor quantum dots; solar cells; CBD method; CdSe; IPCE; QD absorption spectra; electron-conducting films; hole conductor; incident photo conversion efficiency; light absorbers; nanoporous electron conductor films; quantum-dot sensitized solar cells; solution-based chemical bath deposition;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5616761
  • Filename
    5616761