DocumentCode :
2778890
Title :
High efficiency CdSe quantum-dot sensitized solar cells
Author :
Zheng, Zhi ; Zhao, Linan ; Wang, Marilyn ; Liu, Minling ; Marcus, Matthew S. ; Liu, Yue
Author_Institution :
Honeywell Sensors & Wireless Labs., Honeywell Int., Inc., Minneapolis, MN, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
High quality CdSe quantum-dot (QD) sensitized solar cells have been successfully fabricated by in-situ deposition of QDs into TiO2 nanoporous electron conductor (EC) films using a near room-temperature solution-based chemical bath deposition (CBD) method. An energy conversion efficiency of 4.44% under AM1.5G illumination is achieved on a device fabricated using CdSe QDs as a light absorber, TiO2 nanoparticles as an electron-conducting film, and a Polysulfide Na2S/S based electrolyte as a hole-conductor. Results also show that incident photo conversion efficiency (IPCE) of above 70% was obtained within a majority of the CdSe QD absorption spectrum range, and a peak value of 83% between 500-550nm. The light harvesting efficiency of the QD in the device is evaluated to between 75-85% in the same spectral range, indicating an internal quantum efficiency of greater than 95% was achieved. These results are among the best reported to date of the QD-based solar cells. We present data from prototype devices of various EC film thicknesses, morphologies, material composites, as well as QD deposition conditions and hole conductor variations and show how they impact key device metrics.
Keywords :
cadmium compounds; chemical vapour deposition; semiconductor quantum dots; solar cells; CBD method; CdSe; IPCE; QD absorption spectra; electron-conducting films; hole conductor; incident photo conversion efficiency; light absorbers; nanoporous electron conductor films; quantum-dot sensitized solar cells; solution-based chemical bath deposition;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5616761
Filename :
5616761
Link To Document :
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