Title :
A light-shield a-Si TFT with low dark-leakage currents
Author :
Chen, Yeong-E ; Chen, Jr-Hong ; Tai, Ya-Hsiang
Author_Institution :
Electron. Res. & Service Org., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
A light-shield amorphous silicon (a-Si:H) thin film transistor (TFT) with low dark leakage current is developed. The a-Si:H island edge of this TFT is selectively oxidized without affecting the metal/n+ a-Si:H layer contact quality, and thus the hole current flowing through the parasitic metal/intrinsic a-Si:H contact at that edge can be blocked. Using this technique, the TFT with effective mobility of 0.7 cm 2/Vsec, subthreshold swing of 0.55 V/dec, and threshold voltage of 1.5 V can be achieved. In addition, the leakage current of the TFT is as low as 0.5 pA at high negative gate bias of -10 V and drain voltage of 10 V
Keywords :
amorphous semiconductors; elemental semiconductors; leakage currents; shielding; silicon; thin film transistors; Si; a-Si TFT; amorphous silicon thin film transistor; carrier mobility; dark leakage current; light shield; subthreshold swing; threshold voltage; Amorphous silicon; Electrodes; Electronics industry; Industrial electronics; Leakage current; Lighting; Protection; Sputtering; Thin film transistors; Threshold voltage;
Conference_Titel :
Information Display, 1999. ASID '99. Proceedings of the 5th Asian Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
957-97347-9-8
DOI :
10.1109/ASID.1999.762721
