• DocumentCode
    2779103
  • Title

    Ellipsometric study of SiN/sub x//nc-Si/SiN/sub x/ multilayers

  • Author

    Basa, Peter ; Petrik, Peter

  • Author_Institution
    Res. Inst. for Tech. Phys. & Mater. Sci., Hungarian Acad. of Sci., Budapest
  • Volume
    2
  • fYear
    2005
  • fDate
    5-5 Oct. 2005
  • Firstpage
    417
  • Abstract
    Low pressure chemical vapour deposited and annealed SiNx/nc-Si/SiNx layers prepared on Si substrates were characterized by spectroscopic ellipsometry. The effective medium approximation model was used to obtain the thickness, the composition and homogeneity of the layers. A significant effect of the deposition time and annealing process was obtained
  • Keywords
    annealing; chemical vapour deposition; multilayers; nanostructured materials; silicon; silicon compounds; thin films; Si; SiNx-Si-SiNx; annealing process; low pressure chemical vapour deposition; multilayers; silicon substrates; spectroscopic ellipsometry; Annealing; Chemicals; Dielectric materials; Dielectric substrates; Ellipsometry; Nanocrystals; Nonhomogeneous media; Silicon compounds; Spectroscopy; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-9214-0
  • Type

    conf

  • DOI
    10.1109/SMICND.2005.1558815
  • Filename
    1558815
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2779103