• DocumentCode
    2779111
  • Title

    Biomimetic antireflection coating for efficiency enhancement of triple-junction solar cells utilizing nanosphere lithography

  • Author

    Chiu, M.Y. ; Chang, F.Y. ; Chang, C.H. ; Tsai, M.A. ; Yu, Peichen

  • Author_Institution
    Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    In this work, we demonstrate a thorough device design, fabrication, characterization, and analysis of biomimetic antireflective structures implemented on a Ga0.5In0.5P/GaAs/Ge triple-junction solar cell. The sub-wavelength structures are fabricated on a silicon nitride passivation layer using polystyrene nanosphere lithography followed by anisotropic etching. Both the reflectance spectroscopy and external quantum efficiency measurements confirm the improved optical absorption in the ultraviolet/blue and near-infrared wavelengths. Hence, the conversion efficiency of cell with sub-wavelength structure (SWS) is enhanced by 46.1% and 3.4% due to much improved current-matching, compare to cells without an ARC and SL ARC, respectively. We further employ RCWA method to analyze the reflectance by tuning structural factors such as periodicity or height of the SWS.
  • Keywords
    III-V semiconductors; antireflection coatings; etching; gallium arsenide; germanium; indium compounds; light absorption; nanolithography; solar cells; Ga0.5In0.5P-GaAs-Ge; RCWA method; SL ARC; SiN; anisotropic etching; biomimetic antireflection coating; biomimetic antireflective structure analysis; current matching; efficiency 3.4 percent; efficiency 46.1 percent; external quantum efficiency measurements; near-infrared wavelengths; optical absorption; polystyrene nanosphere lithography; reflectance spectroscopy; silicon nitride passivation layer; subwavelength structures; triple-junction solar cell efficiency enhancement; ultraviolet-blue wavelengths;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5616770
  • Filename
    5616770