Title :
Biomimetic antireflection coating for efficiency enhancement of triple-junction solar cells utilizing nanosphere lithography
Author :
Chiu, M.Y. ; Chang, F.Y. ; Chang, C.H. ; Tsai, M.A. ; Yu, Peichen
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this work, we demonstrate a thorough device design, fabrication, characterization, and analysis of biomimetic antireflective structures implemented on a Ga0.5In0.5P/GaAs/Ge triple-junction solar cell. The sub-wavelength structures are fabricated on a silicon nitride passivation layer using polystyrene nanosphere lithography followed by anisotropic etching. Both the reflectance spectroscopy and external quantum efficiency measurements confirm the improved optical absorption in the ultraviolet/blue and near-infrared wavelengths. Hence, the conversion efficiency of cell with sub-wavelength structure (SWS) is enhanced by 46.1% and 3.4% due to much improved current-matching, compare to cells without an ARC and SL ARC, respectively. We further employ RCWA method to analyze the reflectance by tuning structural factors such as periodicity or height of the SWS.
Keywords :
III-V semiconductors; antireflection coatings; etching; gallium arsenide; germanium; indium compounds; light absorption; nanolithography; solar cells; Ga0.5In0.5P-GaAs-Ge; RCWA method; SL ARC; SiN; anisotropic etching; biomimetic antireflection coating; biomimetic antireflective structure analysis; current matching; efficiency 3.4 percent; efficiency 46.1 percent; external quantum efficiency measurements; near-infrared wavelengths; optical absorption; polystyrene nanosphere lithography; reflectance spectroscopy; silicon nitride passivation layer; subwavelength structures; triple-junction solar cell efficiency enhancement; ultraviolet-blue wavelengths;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5616770
