DocumentCode
2779111
Title
Biomimetic antireflection coating for efficiency enhancement of triple-junction solar cells utilizing nanosphere lithography
Author
Chiu, M.Y. ; Chang, F.Y. ; Chang, C.H. ; Tsai, M.A. ; Yu, Peichen
Author_Institution
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2010
fDate
20-25 June 2010
Abstract
In this work, we demonstrate a thorough device design, fabrication, characterization, and analysis of biomimetic antireflective structures implemented on a Ga0.5In0.5P/GaAs/Ge triple-junction solar cell. The sub-wavelength structures are fabricated on a silicon nitride passivation layer using polystyrene nanosphere lithography followed by anisotropic etching. Both the reflectance spectroscopy and external quantum efficiency measurements confirm the improved optical absorption in the ultraviolet/blue and near-infrared wavelengths. Hence, the conversion efficiency of cell with sub-wavelength structure (SWS) is enhanced by 46.1% and 3.4% due to much improved current-matching, compare to cells without an ARC and SL ARC, respectively. We further employ RCWA method to analyze the reflectance by tuning structural factors such as periodicity or height of the SWS.
Keywords
III-V semiconductors; antireflection coatings; etching; gallium arsenide; germanium; indium compounds; light absorption; nanolithography; solar cells; Ga0.5In0.5P-GaAs-Ge; RCWA method; SL ARC; SiN; anisotropic etching; biomimetic antireflection coating; biomimetic antireflective structure analysis; current matching; efficiency 3.4 percent; efficiency 46.1 percent; external quantum efficiency measurements; near-infrared wavelengths; optical absorption; polystyrene nanosphere lithography; reflectance spectroscopy; silicon nitride passivation layer; subwavelength structures; triple-junction solar cell efficiency enhancement; ultraviolet-blue wavelengths;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5616770
Filename
5616770
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