Semiconductor Snail Laser

Author

Strain, M.J. ; Pérez-Serrano, A. ; Mezosi, G. ; Verschaffelt, G. ; Sciré, A. ; Danckaert, Jan ; Sorel, Marc ; Balle, S.

Author_Institution

Dept. Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

A new snail laser geometry is modelled and presented, exhibiting stable, unidirectional lasing at both 1550 nm and 808 nm. We have calculated the fundamental mode thresholds and output power for Semiconductor Snail Laser (SSL) as a function of device parameters, i.e. coupler efficiency and output facets reflectivities. The coupler efficiency is the fraction of light transmitted between the waveguides in the directional couplers (DC). We have used a scattering matrix formulation and an analytical approximation to the optical susceptibility for the medium description, in order to determine the "optimal" coupling efficiency that maximizes the output power. Lasing action and good emission properties were therefore theoretically predicted.

Keywords

S-matrix theory; laser beams; laser modes; optical directional couplers; optical susceptibility; optical waveguides; semiconductor lasers; directional couplers; fundamental mode threshold; laser power; light transmission; optical susceptibility; optical waveguide; scattering matrix formulation; semiconductor snail laser; snail laser geometry; unidirectional lasing; wavelength 1550 nm; wavelength 808 nm; Geometrical optics; Laser modes; Laser stability; Optical coupling; Optical scattering; Optical waveguides; Power generation; Power lasers; Semiconductor lasers; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5191743

Filename

5191743