Influence of gate engineering on the analog and RF performance of DG MOSFETs

The design of analog and radio-frequency (RF) circuits in CMOS technology has become increasingly more difficult as device modeling faces new challenges in the deep sub micrometer regime and emerging circuit applications. Double gate MOSFETs show greater promise in this regard with improved short channel effects, high gate control and reduced leakage. But still they may be engineered for better performances in case of analog design. In this paper, we explore the influence of gate engineering on the analog and RF performances of Double gate MOSFETs for mixed signal applications.