Title :
A BCE-type a-Si TFT with an island metal masking structure
Author :
Chen, J.H. ; Huang, T.H. ; Chen, Y.E.
Author_Institution :
Electron. Res. & Service Organ., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
A new back channel etched hydrogenated thin film transistor (TFT) device with an island metal masking structure has been proposed and fabricated. The TFT structure contained a continuous layer deposition process of SiNx/a-Si/n+a-Si/metal, and finally resulted in an additional metal layer between source/drain metals and islands. The channel metal was etched in the S/D metal mask patterning simultaneously. Results showed the newly designed TFT device exhibiting some characteristics: (i) good S/D metal/n+a-Si contact, (ii) prevention of plasma damage during processing especially for oxygen plasma ashing and (iii) without additional mask. These advantages will be helpful for a wider range of process window in large area mass production a-Si TFT fabrications
Keywords :
amorphous semiconductors; discontinuous metallic thin films; elemental semiconductors; hydrogen; masks; silicon; silicon compounds; sputter etching; thin film transistors; BCE-type a-Si TFT; S/D metal mask patterning; SiN-Si; SiNx/a-Si/n+a-Si/metal; a-Si TFT fabrication; back channel etched hydrogenated thin film transistor; continuous layer deposition process; island metal masking structure; oxygen plasma ashing; plasma damage; source/drain metals; Etching; Fabrication; Mass production; Plasma applications; Plasma devices; Plasma materials processing; Plasma properties; Plasma sources; Silicon compounds; Thin film transistors;
Conference_Titel :
Information Display, 1999. ASID '99. Proceedings of the 5th Asian Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
957-97347-9-8
DOI :
10.1109/ASID.1999.762762
