Experimental characterization of p-channel polysilicon conductivity modulated thin-film transistors

Author

Zhu, Chunxiang ; Sin, Johnny K O ; Kwok, Hoi S.

Author_Institution

Center for Display Res., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong

fYear

1999

fDate

1999

Firstpage

287

Lastpage

291

Abstract

A p-channel poly-Si CMTFT (Conductivity Modulated Thin-Film Transistor) is demonstrated and experimentally characterized. The transistor uses the concept of conductivity modulation in the offset region to obtain a significant reduction in on-state resistance. This structure can provide 1.5 to 2 orders of magnitude higher on-state current than that of the conventional offset drain TFT at drain voltage ranging from -15 V to -5 V while still maintaining low leakage current and simplicity in device operation. The p-channel CMTFT can be combined with the n-channel CMTFT to form CMOS high voltage drivers, which are very suitable for use in fully integrated large area electronic applications

Keywords

electrical conductivity; elemental semiconductors; leakage currents; semiconductor device measurement; silicon; thin film transistors; -15 to -5 V; CMOS high voltage drivers; Si; conductivity modulated thin-film transistor; conductivity modulation; drain voltage; low leakage current; n-channel CMTFT; offset region; on-state current; on-state resistance; p-channel CMTFT; p-channel poly-Si CMTFT; p-channel polysilicon conductivity modulated thin-film transistors; Conductivity; Driver circuits; Fabrication; Glass; Leakage current; Liquid crystal displays; Silicon; Substrates; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Information Display, 1999. ASID '99. Proceedings of the 5th Asian Symposium on

Conference_Location

Hsinchu

Print_ISBN

957-97347-9-8

Type

conf

DOI

10.1109/ASID.1999.762764

Filename

762764