DocumentCode
2779579
Title
InP based, terahertz quantum cascade lasers with 4 quantum well active region design
Author
Fisher, Matt ; Scalari, G. ; Amanti, M. ; Beck, M. ; Walther, Ch ; Faist, J.
Author_Institution
Inst. for Quantum Electron., ETH Zurich, Zurich, Switzerland
fYear
2009
fDate
14-19 June 2009
Firstpage
1
Lastpage
1
Abstract
The quantum cascade laser (QCL) is a semiconductor laser that employs radiative transitions of an electron between the bounded states in a superlattice (SL) and phenomenon of resonant tunnelling. Here we present a QCL that operates in the terahertz (THz) spectral region at wavelength of 95 mum.The presented device is based on four quantum well design with spatially diagonal radiative transition and longitudinal-phonon scattering assisted depopulation of lower lasing state. Diagonal nature of the transition with dipole matrix element z=5.2nm leads to favourable lifetime ratio of upper and lower lasing states with better high temperature operation. Maximum operating temperature and output power was improved to and is comparable to the GaAs counterparts.
Keywords
III-V semiconductors; indium compounds; phonons; quantum cascade lasers; resonant tunnelling; semiconductor quantum wells; superlattices; terahertz wave spectra; InP; diagonal radiative transition; longitudinal-phonon scattering; quantum cascade laser; quantum well active region design; resonant tunnelling; semiconductor laser; superlattice; terahertz spectral region; wavelength 95 mum; Electrons; Indium phosphide; Laser transitions; Optical design; Quantum cascade lasers; Quantum well lasers; Resonant tunneling devices; Semiconductor lasers; Semiconductor superlattices; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location
Munich
Print_ISBN
978-1-4244-4079-5
Electronic_ISBN
978-1-4244-4080-1
Type
conf
DOI
10.1109/CLEOE-EQEC.2009.5191757
Filename
5191757
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