Title :
Single-grain Si thin-film transistors for analog and RF circuit applications
Author :
Saputra, N. ; Danesh, M. ; Baiano, A. ; Ishihara, R. ; Long, J.R. ; Metselaar, J.W. ; Beenakker, C.I.M. ; Karaki, N. ; Hiroshima, Y. ; Inoue, S.
Abstract :
Single-grain (SG) Si-TFTs fabricated inside a location-controlled grain have SOI-like performance. To validate their potential for circuit application, key analog and RF building blocks are characterized. An operational amplifier (Opamp) and a voltage reference (Vref) demonstrate DC gain of 50 dB and power supply rejection ratio (PSRR) of 50 dB, respectively. With fT in the GHz range, SG-TFTs enable RF circuit design below 1 GHz. An RF cascode amplifier circuit is demonstrated.
Keywords :
operational amplifiers; radiofrequency amplifiers; silicon; thin film transistors; Opamp; PSRR; RF cascode amplifier circuit; Si; Si-TFTs; analog circuit applications; operational amplifier; power supply rejection ratio; single-drain silicon thin-film transistors; Application software; Circuits; Crystallization; Operational amplifiers; Radio frequency; Radiofrequency amplifiers; Substrates; Temperature; Thin film transistors; Voltage;
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2007.4430890
