DocumentCode
2780095
Title
Negative bias temperature instability: Recoverable versus permanent degradation
Author
Grasser, Tibor ; Kaczer, Ben
Author_Institution
TU Wien, Wien
fYear
2007
fDate
11-13 Sept. 2007
Firstpage
127
Lastpage
130
Abstract
The analysis of negative bias temperature instability (NBTI) conventionally focuses on the stress phase where features like the power-law exponent, the temperature-dependence, and saturation of the observed threshold voltage shift have been extensively studied. As soon as the stress is removed, however, relaxation sets in, restoring at least some of the degradation. Although some studies on the relaxation phase have been presented, few authors have acknowledged the importance of the relaxation phase as a means of deepening our understanding of NBTI. We present a detailed analysis of NBTI relaxation, show that even at lower stressing voltages a permanent/slowly relaxing component is present, and demonstrate how this initially less dominant component might eventually determine the device lifetime.
Keywords
relaxation; semiconductor device reliability; thermal stability; negative bias temperature instability; relaxation phase; stress phase; Degradation; Differential equations; Laboratories; MOSFETs; Microelectronics; Negative bias temperature instability; Niobium compounds; Stress measurement; Threshold voltage; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location
Munich
ISSN
1930-8876
Print_ISBN
978-1-4244-1123-8
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2007.4430895
Filename
4430895
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