• DocumentCode
    2780095
  • Title

    Negative bias temperature instability: Recoverable versus permanent degradation

  • Author

    Grasser, Tibor ; Kaczer, Ben

  • Author_Institution
    TU Wien, Wien
  • fYear
    2007
  • fDate
    11-13 Sept. 2007
  • Firstpage
    127
  • Lastpage
    130
  • Abstract
    The analysis of negative bias temperature instability (NBTI) conventionally focuses on the stress phase where features like the power-law exponent, the temperature-dependence, and saturation of the observed threshold voltage shift have been extensively studied. As soon as the stress is removed, however, relaxation sets in, restoring at least some of the degradation. Although some studies on the relaxation phase have been presented, few authors have acknowledged the importance of the relaxation phase as a means of deepening our understanding of NBTI. We present a detailed analysis of NBTI relaxation, show that even at lower stressing voltages a permanent/slowly relaxing component is present, and demonstrate how this initially less dominant component might eventually determine the device lifetime.
  • Keywords
    relaxation; semiconductor device reliability; thermal stability; negative bias temperature instability; relaxation phase; stress phase; Degradation; Differential equations; Laboratories; MOSFETs; Microelectronics; Negative bias temperature instability; Niobium compounds; Stress measurement; Threshold voltage; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
  • Conference_Location
    Munich
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-1123-8
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2007.4430895
  • Filename
    4430895