DocumentCode
2780142
Title
Power-cycling of DMOS-switches triggers thermo-mechanical failure mechanisms
Author
Smorodin, Tobias ; Stecher, Matthias ; Glavanovics, Michael ; Wilde, Jürgen
Author_Institution
Infineon Technol. AG, Munich
fYear
2007
fDate
11-13 Sept. 2007
Firstpage
139
Lastpage
142
Abstract
In this article the failure behavior of DMOS-switches under power-cycle stress is shown to be dominated by thermo-mechanical deformation of the metallization. The failure evolves without a significant influence from electromigration stress.
Keywords
semiconductor device metallisation; semiconductor switches; DMOS-switch; double-diffused-MOS; power-cycle stress; thermo-mechanical failure mechanism; Aluminum; Copper; Electromigration; Failure analysis; Metallization; Switches; Temperature; Thermal stresses; Thermomechanical processes; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location
Munich
ISSN
1930-8876
Print_ISBN
978-1-4244-1123-8
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2007.4430898
Filename
4430898
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