Title :
Area dependent simulation model for the double exponential effect in I(V)-characteristics of solar cells
Author :
Sams, M. ; Lackner, C. ; Ostermann, T.
Author_Institution :
Inst. for Integrated Circuits, Johannes Kepler Univ., Linz, Austria
Abstract :
In contrary to classical explanations of the double exponential effect using a two-diode-model, based on two different recombination processes, an area dependent model using a one-diode-model with modifiable diode quality factors can also explain the double exponential effect in I(V)-characteristics of solar cells.
Keywords :
Q-factor; semiconductor diodes; solar cells; I(V)-characteristics; area dependent simulation; double exponential effect; quality factors; recombination process; solar cells; two diode model;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5616835
