Title :
Trading off static power and dynamic performance in CMOS digital circuits: bulk versus double gate SOI MOSFETs
Author :
Agostinelli, M. ; Alioto, M. ; Esseni, D. ; Selmi, L.
Author_Institution :
DIEGM, Udine
Abstract :
This paper investigates with a mixed device/circuit simulation methodology the effectiveness of DG SOI MOSFETs compared to conventional bulk MOSFETs for the implementation of low standby power circuit techniques. Our results indicate that DG MOSFETs offer significant advantages essentially because of the larger V T sensitivity to back-biasing.
Keywords :
CMOS digital integrated circuits; MOSFET circuits; integrated circuit modelling; CMOS digital circuits; back-biasing sensitivity; bulk MOSFET; circuit simulation; double gate SOI MOSFET; low standby power circuit technique; mixed device; static power-dynamic performance trade off; CMOS digital integrated circuits; CMOS technology; Circuit simulation; Circuit testing; Digital circuits; Doping; Gate leakage; MOSFETs; Paper technology; Silicon;
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2007.4430911
