The conductive bridging random access memory (CBRAM): A non-volatile multi-level memory technology

Author

Liaw, Corvin ; Kund, Michael ; Schmitt-Landsiedel, Doris ; Ruge, Ingolf

Author_Institution

Qimonda AG, Munich

fYear

2007

fDate

11-13 Sept. 2007

Firstpage

226

Lastpage

229

Abstract

CBRAM is investigated as a NVM memory with respect to retention characteristics and multilevel capability. The CB-junction is characterised by photocurrent and photoluminescence. Measurement results showing the long-term data retention of the CBRAM technology are presented. The stability of four levels corresponds to the capability to store two bits. Scalability is shown with suitable switching characteristics and area-independent on-resistance down to sub 40 nm junction size. Operating conditions and circuits are introduced for CBRAM writing and voltage sensing.

Keywords

photoconductivity; photoluminescence; random-access storage; switching; CBRAM writing; NVM memory; conductive bridging random access memory; nonvolatile multilevel memory technology; photocurrent; photoluminescence; retention characteristics; switching characteristics; voltage sensing; Costs; Electrodes; Nonvolatile memory; Phase change random access memory; Photoconductivity; Random access memory; Scalability; Semiconductor materials; Silver; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European

Conference_Location

Munich

ISSN

1930-8876

Print_ISBN

978-1-4244-1123-8

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2007.4430919

Filename

4430919