W/Ta2O5/TaN MIM capacitor for high density one time programmable memory

Author

Villaret, A. ; Ebrard, E. ; Casanova, N. ; Guillaumet, S. ; Candelier, P. ; Coronel, P. ; Schoellkopf, J.-P. ; Skotnicki, T.

Author_Institution

STMicroelectron., Crolles

fYear

2007

fDate

11-13 Sept. 2007

Firstpage

230

Lastpage

233

Abstract

In this paper, we report a study on an alternative one time programmable (OTP) memory cell consisting in an access MOSFET and a capacitor integrated between the contact plug and the first metal line level. Such an OTP should result in a denser cell as compared to the standard polyfuse or antifuse OTPs. The results obtained on these integrated capacitors show good overall electrical performance with breakdown voltage adjustable under 5 V and large sense current margins (about 6 decades). The dispersion, even if quite large in this initial study, proved to be manageable since the capacitor´s acceleration factors are high.

Keywords

CMOS memory circuits; MIM devices; MOSFET circuits; random-access storage; tantalum compounds; thin film capacitors; tungsten; MIM capacitor; MOSFET; W-Ta₂O₅-TaN; breakdown voltage; contact plug; high-density one-time programmable memory cell; integrated capacitors; Acceleration; CMOS process; Contacts; Dielectric thin films; Etching; MIM capacitors; MOSFET circuits; Metal-insulator structures; Nonvolatile memory; Plugs;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European

Conference_Location

Munich

ISSN

1930-8876

Print_ISBN

978-1-4244-1123-8

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2007.4430920

Filename

4430920