DocumentCode
2780603
Title
A novel graphene channel field effect transistor with Schottky tunneling source and drain
Author
Zhu, Jing ; Woo, Jason C S
Author_Institution
California Univ. Los Angeles, Los Angeles
fYear
2007
fDate
11-13 Sept. 2007
Firstpage
243
Lastpage
246
Abstract
In this paper, a novel concept of graphene channel FET with highly doped silicon source/drain is proposed. The current-voltage characteristics are analyzed and the optimized design parameters are presented by numerical analysis and device simulation. Such novel graphene channel MOSFETs on FDSOI or on insulator are found to have much superior current drive and transconductance than silicon MOSFETs.
Keywords
MOSFET; Schottky gate field effect transistors; semiconductor device models; Schottky tunneling source and drain; current-voltage characteristics; device simulation; graphene channel MOSFET; graphene channel field effect transistor; metal-oxide-semiconductor field effect transistor; Analytical models; Current-voltage characteristics; Design optimization; FETs; Insulation; MOSFETs; Numerical analysis; Silicon; Transconductance; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location
Munich
ISSN
1930-8876
Print_ISBN
978-1-4244-1123-8
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2007.4430923
Filename
4430923
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