• DocumentCode
    2780959
  • Title

    "TANDEM-H bridge" a new approach towards low switching loss at high switching frequencies

  • Author

    Ahmad, Arbab Waleed ; Kamran, Farrukh

  • Author_Institution
    Coll. of E&ME, NUST, Pakistan
  • fYear
    2005
  • fDate
    17-18 Sept. 2005
  • Firstpage
    418
  • Lastpage
    422
  • Abstract
    High frequency induction heating applications especially pipe/tube welding requires output power in the range of 100´s of KW at frequencies ranging from 200 KHz to approx 1 MHz. The power frequency product poses a great challenge for designers in terms of semiconductor device selection and cost. Though power MOSFETs are the most popular choice, their lower current capacity and higher costs divert the attraction towards lower cost IGBT usage in modern day power electronic equipment, IGBT´s being economical and having high current capacity, their use is limited by lower switching frequency. This paper presents a new topology that can enable designers to use IGBT´s at higher frequencies while keeping the switching loss low.
  • Keywords
    bridge circuits; induction heating; insulated gate bipolar transistors; power MOSFET; IGBT; TANDEM-H bridge; high frequency induction heating; high switching frequencies; low switching loss; pipe welding; power MOSFET; power electronic equipment; semiconductor device; tube welding; Bridges; Costs; Insulated gate bipolar transistors; MOSFETs; Power electronics; Power generation; Semiconductor devices; Switching frequency; Switching loss; Welding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Emerging Technologies, 2005. Proceedings of the IEEE Symposium on
  • Print_ISBN
    0-7803-9247-7
  • Type

    conf

  • DOI
    10.1109/ICET.2005.1558918
  • Filename
    1558918