DocumentCode
2780959
Title
"TANDEM-H bridge" a new approach towards low switching loss at high switching frequencies
Author
Ahmad, Arbab Waleed ; Kamran, Farrukh
Author_Institution
Coll. of E&ME, NUST, Pakistan
fYear
2005
fDate
17-18 Sept. 2005
Firstpage
418
Lastpage
422
Abstract
High frequency induction heating applications especially pipe/tube welding requires output power in the range of 100´s of KW at frequencies ranging from 200 KHz to approx 1 MHz. The power frequency product poses a great challenge for designers in terms of semiconductor device selection and cost. Though power MOSFETs are the most popular choice, their lower current capacity and higher costs divert the attraction towards lower cost IGBT usage in modern day power electronic equipment, IGBT´s being economical and having high current capacity, their use is limited by lower switching frequency. This paper presents a new topology that can enable designers to use IGBT´s at higher frequencies while keeping the switching loss low.
Keywords
bridge circuits; induction heating; insulated gate bipolar transistors; power MOSFET; IGBT; TANDEM-H bridge; high frequency induction heating; high switching frequencies; low switching loss; pipe welding; power MOSFET; power electronic equipment; semiconductor device; tube welding; Bridges; Costs; Insulated gate bipolar transistors; MOSFETs; Power electronics; Power generation; Semiconductor devices; Switching frequency; Switching loss; Welding;
fLanguage
English
Publisher
ieee
Conference_Titel
Emerging Technologies, 2005. Proceedings of the IEEE Symposium on
Print_ISBN
0-7803-9247-7
Type
conf
DOI
10.1109/ICET.2005.1558918
Filename
1558918
Link To Document