DocumentCode
2781086
Title
MMIC modeling technique and its application
Author
Chen, Xiaojian ; Chen, Xuejun ; Cen, Yuanfei ; Dai, Yongsheng ; Wan, Junxian ; Li, Hui
Author_Institution
Nanjing Electron. Devices Inst., China
fYear
2000
fDate
2000
Abstract
The technique of MMIC modeling at Nanjing Electronic Devices Institute (NEDI) is presented. The layout design of the modeling FET (PHEMT), microwave probing calibration, model extraction and statistics/verification are introduced and discussed. By using the established models, several MMICs such as power amplifiers, LNAs, mixers, switches and phase shifters were successfully developed, covering applications in transmission, reception and controlled circuit with frequencies up to the 20 GHz range
Keywords
HEMT integrated circuits; MESFET integrated circuits; field effect MMIC; integrated circuit design; integrated circuit modelling; 20 GHz; FET layout design; FET modelling; LNA; MESFET; MMIC modeling technique; NEDI; PHEMT; microwave probing calibration; mixers; model extraction; phase shifters; power amplifiers; statistics/verification; switches; Calibration; MMICs; Microwave FETs; Microwave devices; PHEMTs; Phase shifters; Power amplifiers; Statistics; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology, 2000, 2nd International Conference on. ICMMT 2000
Conference_Location
Beijing
Print_ISBN
0-7803-5743-4
Type
conf
DOI
10.1109/ICMMT.2000.895596
Filename
895596
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