• DocumentCode
    2781135
  • Title

    Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

  • Author

    Harik, Louis ; Sallese, Jean-Michel ; Kayal, Maher

  • Author_Institution
    Ecole Polytech. Fed. de Lausanne, Lausanne
  • fYear
    2007
  • fDate
    11-13 Sept. 2007
  • Firstpage
    366
  • Lastpage
    369
  • Abstract
    In this paper, we have used the partially depleted SOI MOSFET to measure the intensity of light. The charge pumping technique was used to get rid of the photogenerated carriers in the body in an attempt to keep the drain current constant. Using this technique flux densities as low as 2 mW/m2 were measured.
  • Keywords
    MOSFET; photodetectors; phototransistors; silicon-on-insulator; SOI MOSFET photodetector; drain current; partially depleted SOI MOSFET; photogenerated carriers; transient charge pumping technique; Charge pumps; Current measurement; MOSFET circuits; Optical films; Optical pumping; Optical sensors; Photodetectors; Silicon on insulator technology; Threshold voltage; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
  • Conference_Location
    Munich
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-1123-8
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2007.4430954
  • Filename
    4430954
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2781135